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| Advance Product Information September 15, 2004 Wideband Packaged HPA with AGC Key Features * * * * * * * LOT CODE TGA2509-EPU-FL Frequency Range: 2-20 GHz 29 dBm Nominal P1dB 15 dB Nominal Gain, Midband 25dB AGC Range 10 lead flange package style Bias Conditions: Vd = 12 V, Idq = 1.1 A Package Dimensions: 0.7 x 0.3 x 0.1 in. Primary Applications * * * * Wideband Power Amp Military EW and ECM Test Equipment VSAT and Digital Radio Product Description The TriQuint TGA2509-EPU-FL is a Wideband High Power Amplifier with 25 dB AGC range. The HPA operates from 2-20 GHz and provides 29dBm of output power at 1 dB gain compression with small signal gain of 15 dB. The TGA2509-EPU-FL is suitable for a variety of applications such as wideband electronic warfare systems, test equipment and VSAT and Digital Radio. The flange lead package has a high thermal conductivity copper alloy base. Evaluation Boards are available. 20 16 12 Measured Fixtured Data Bias Conditions: Vd =12 V, Id= 1.1 A 20 16 Gain 12 8 4 0 -4 Input -8 -12 Output -16 -20 -24 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Gain (dB) 8 4 0 -4 -8 -12 -16 -20 -24 Frequency (GHz) 34 32 Output Power (dBm) 30 28 26 24 22 20 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Return Loss (dB) Advance Product Information September 15, 2004 TGA2509-EPU-FL TABLE I MAXIMUM RATINGS 1/ SYMBOL V+ Vg1 Vg2 Vc I + PARAMETER Positive Supply Voltage Gate 1 Supply Voltage Range Gate 2 Supply Voltage Range AGC Control Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation (without using AGC) Power Dissipation (when Vc < +2V) Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 12.5 V -2V TO 0 V -2V TO 0 V Vc < +5 V V -Vc < 14V 1.4 A 70 mA 30 dBm 13.2 W 10.6 W 150 C 210 C -65 to 150 C + NOTES 2/ 2/ 2/ 2/, 3/ 2/, 3/ 4/, 5/ | IG | PIN PD PD TCH TM TSTG 1/ 2/ 3/ 4/ These ratings represent the maximum operable values for this device. Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 60 C, the median life is 1 E+6 hours. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 5/ Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL TABLE II RF CHARACTERIZATION TABLE (TA = 25 C, Nominal) Vd = 12 V, Id = 1.08 A SYMBOL Gain IRL ORL PARAMETER Small Signal Gain Input Return Loss Output Return Loss Output Power @ 1dB Gain Compression TEST CONDITION f = 2-20 GHz f = 2-20 GHz f = 2-20 GHz f = 2-20 GHz NOMINAL 15 10 12 29 UNITS dB dB dB dBm P1dB TABLE III THERMAL INFORMATION Parameter RJC Thermal Resistance (channel to backside of package) RJC Thermal Resistance (channel to backside of package) Test Conditions Vd = 12 V ID = 1.08 A Pdiss = 13.2 W (without using AGC) Vd = 12 V ID = 0.88 A Pdiss = 10.6 W (when using AGC) TCH (oC) 150 RTJC (qC/W) 6.4 TM (HRS) 1 E+6 150 8.3 1 E+6 Note: Package attached with mounting hardware and metal shim (Al or In) to carrier at 65C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 15 W with 1 W RF power delivered to load. Power dissipated is 14 W and the temperature rise in the channel is 90 C. Baseplate temperature must be reduced to 60 C to remain below the 150 C maximum channel temperature. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Typical Fixtured Performance Bias Conditions: Vd = 12V, Id = 1.08A, Vg1 = -0.28V Typical, Vg2 = -0.35V Typical, Vc (optional) = 2.6V Typical 20 16 12 Gain 20 16 12 8 4 0 -4 Input -8 -12 Output -16 -20 -24 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Gain (dB) 8 4 0 -4 -8 -12 -16 -20 -24 Frequency (GHz) 20 15 Vc=2.6v Vc=2.0v Gain (dB) 10 5 0 -5 Return Loss (dB) Vc=1.5v Vc=1.0v Vc=0.5v Vc=0v Vc=-0.25v Vc=-0.50v Vc=-0.75v -10 -15 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Typical Fixtured Performance Bias Conditions: Vd = 12V, Id = 1.08A, Vg1 = -0.28V Typical, Vg2 = -0.35V Typical, Vc (optional) = 2.6V Typical 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 5v600mA 7v1000mA Gain (dB) 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) 5v800mA 9v600mA 5v1000mA 9v800mA 7v600mA 9v1000mA 7v800mA 20 18 16 Gain (dB) 14 12 10 8 6 4 2 0 0 -55 deg-C 2 4 -40 deg-C 6 8 -20 deg-C 10 12 0 deg-C 14 16 18 20 22 24 Frequency (GHz) +25 deg-C +45 deg-C +65 deg-C Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Typical Fixtured Performance Bias Conditions: Vd = 12V, Id = 1.08A, Vg1 = -0.28V Typical, Vg2 = -0.35V Typical, Vc (optional) = 2.6V Typical 34 Output Power @ P1dB (dBm) 32 30 28 26 24 22 20 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) 32 Output Power@ P1dB (dBm) 30 28 26 24 22 20 18 2 4 6 8 9v800ma 5v1000ma 10 12 9v600ma 5v800ma 14 16 18 20 22 Frequency (GHz) 9v1000ma 7v600ma 7v1000ma 5v600ma 7v800ma Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Typical Fixtured Performance Bias Conditions: Vd = 12V, Id = 1.08A, Vg1 = -0.28V Typical, Vg2 = -0.35V Typical, Vc (optional) = 2.6V Typical 32 Output Power @ P1dB (dBm) 30 28 26 24 22 20 2 -50 deg-C 4 6 8 10 12 0 deg-C 14 16 18 20 22 24 Frequency (GHz) -40 deg-C -20 deg-C +25 deg-C +45 deg-C +65 deg-C Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Typical Fixtured Performance Bias Conditions: Vd = 12V, Id = 1.08A, Vg1 = -0.28V Typical, Vg2 = -0.35V Typical, Vc (optional) = 2.6V Typical 35 32 1700 1600 1500 Output Power (dBm) 29 26 23 20 17 14 11 8 5 8 9 10 11 12 13 14 15 16 17 18 2GHz_Id 1300 1200 1100 1000 900 800 700 19 Pin (dBm) 2GHz_Pout 8GHz_Id 8GHz_Pout 14GHz_Id 14GHz_Pout 20GHz_Id 20GHz_Pout 20 18 16 1700 1600 1500 Gain (dB) 12 10 8 6 4 2 0 8 9 10 11 12 13 14 15 16 17 18 19 1300 1200 1100 1000 900 800 700 Pin (dBm) 2GHz Gain 8GHz_Id 8GHz_Gain 14GHz_Id 14_GHz_Gain 20GHz_Id 20GHz_Gain 2GHz_Id Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com IDS (mA) 14 1400 IDS (mA) 1400 Advance Product Information September 15, 2004 TGA2509-EPU-FL Package Dimensional Drawing & %$ % $ $ $ $ WB I8 #$ ! I8 ( I8 "$ " SAADI ' SAAPVU AA AAA AA A !$ # I8 & W9 G@69AXD9UCA6I9AG@IBUCA ! $ W8 % WB! '$ (AYA! '$ $ &' A$! #! !$ Note: Units are in inches. Package size tolerance 0.005 in. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Evaluation Board Drawing Vg1 RF In RF Out Vd Vc Vg2 Bias Procedures: Vc bias connection is optional, but the 0.1uF cap always needs to be connected. For biasing without AGC control: 1. Apply -1.2V to Vg1, and -1.2V to Vg2. 2. Apply +12V to Vd. 4. Adjust Vg1 to attain 580 mA drain current (Id) 4. Adjust Vg2 to attain 1080 mA total drain current (Id). For biasing with AGC control: 1. Apply -1.2V to Vg1 and -1.2V to Vg2 2. Apply +12V to Vd 3. Apply +2.6V to Vc 4. Adjust Vg1 to attain 580 mA drain current (Id) 5. Adjust Vg2 to attain 1080 mA total drain current (Id). 6. Adjust Vc as needed to control gain level. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Typical Evaluation Board Layout * 33uF Vg1 1 2 3 TGA2509 DATE CODE LOT CODE 11 5 4 6 78 9 10 Vc Vg2 Vd 33uF 33uF COMPONENT 1, 4, 9,10 2, 5, 8 3, 6, 7 11 VALUE 1 uF 10 0.01 uF 100 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 11 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Assembly of a TGA2509-EPU Flange Mount Package onto a Motherboard Manual Assembly for Prototypes 1. Clean the motherboard or the similar module with Acetone. Rinse with alcohol and DI water. Allow the circuit to fully dry. 2. To improve the thermal and RF performance, TriQuint recommends using two # 0-80 bolts to attach a heat sink to the bottom of the package with an indium alloy preform, or equivalent, between the two. 3. Apply Tin/Lead solder, or equivalent, to each active pin of the TGA2509. 4 Clean the assembly with alcohol. Ordering Information Part TG2509-EPU-FL Package Style Flange (Leads bolted down) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 12 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com |
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